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Nucleation of Diamond over Nanotube Coated Si Substrate Using Hot Filament Chemical Vapor Deposition (CVD) System

机译:使用热丝化学气相沉积(CVD)系统在纳米管涂覆的Si衬底上金刚石成核

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摘要

We studied the use of carbon nanotubes as a seeding layer for the nucleation of diamond on Si (100) substrate by using a hot filament chemical vapor deposition (HFCVD) system. Prior to deposition, substrates were seeded with multi-wall carbon nanotube (MWCNT) powder which was prepared separately. MWCNTs were used as nucleation precursors. The diamond grains grew essentially over the nanotubes with a higher growth density in comparison with the un-seeded substrates. The scanning electron microscopy (SEM) image of surface morphology shows crystallites of cauliflower shaped grains. The micro Raman spectroscopic results show a sharp peak at 1,332 cm~(-1) corresponding to diamond phase. X-ray photoelectron spectroscopic study show the presence of carbon (C_(1s)) phase.
机译:我们通过使用热丝化学气相沉积(HFCVD)系统研究了碳纳米管作为晶种在Si(100)衬底上成核的种子层的用途。在沉积之前,用分别制备的多壁碳纳米管(MWCNT)粉末为基板播种。 MWCNT被用作成核前体。与未播种的衬底相比,金刚石晶粒基本上以更高的生长密度在纳米管上生长。表面形态的扫描电子显微镜(SEM)图像显示出菜花形晶粒的微晶。显微拉曼光谱结果表明,在1,332 cm〜(-1)处有一个尖锐的峰,对应于金刚石相。 X射线光电子能谱研究表明存在碳(C_(1s))相。

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