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Densification, Microstructure and Properties of Liquid-Phase Sintered Silicon Carbide

机译:液相烧结碳化硅的致密化,显微组织和性能

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Liquid-Phase Sintered Silicon Carbide (LPSSiC) materials were produced with different Y_2O_3:Al_2O_3 sintering additive ratios. Different densification techniques were employed (hot pressing (HP) and gas pressure sintering (GPS)) and densification kinetics studied. The results show significant increase in densification with decreasing Y_2O_3: Al_2O_3 ratio. Microstructure and phase evolution during sintering and post-sintering heat treatment was studied. The ratio of the SiC polytypes and the amount and crystalline composition of grain boundary phases was determined using Rietveld analysis. Micro structures of the materials were related to mechanical (hardness, fracture toughness and strength) and electrical properties. Electrical properties were studied using Impedance Spectroscopy. By this method, the resistivities of the grain and grain boundaries could be separated.
机译:以不同的Y_2O_3:Al_2O_3烧结添加剂比例制备了液相烧结碳化硅(LPSSiC)材料。使用了不同的致密化技术(热压(HP)和气压烧结(GPS)),并研究了致密化动力学。结果表明,随着Y_2O_3:Al_2O_3比值的降低,致密化显着增加。研究了烧结和烧结后热处理过程中的显微组织和相演变。使用Rietveld分析确定SiC多晶型的比率以及晶界相的数量和晶体组成。材料的微观结构与机械(硬度,断裂韧性和强度)和电性能有关。使用阻抗谱研究电性能。通过这种方法,可以分离晶粒的电阻率和晶界。

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