Preparation and Electrical Properties of (100) Preferred (Ba,Sr)TiO_3 Bilayer Thin Films Derived from Pulse Laser Deposition Method

摘要

Bilayer Ba_(0.6)Sr_(0.4)TiO_3 - Ba_(0.4)Sr_(0.6)TiO_3 and Ba_(0.4)Sr_(0.6)TiO_3 - Ba_(0.6)Sr_(0.4)TiO_3 thin films were deposited on the LaNiO_3-buffered Pt/Ti/SiO_2/Si substrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.