Preparation of NASICON-Based Ceramic Thick-Film with Electrophoretic Deposition for Solid-State Photoluminescence Device

摘要

Electrophoretic deposition method was applied to prepare some solid-electrolyte thick-films of Na_(1+x)Zr_2Si_xP_(3-x)O_(12) (x = 2, 3; NASICON) and Na_5DySi_4O_(12) (NDSO) on Au-coated alumina substrates. With the ethanol-based medium, the deposition process was investigated under constant voltage mode. The concentration of the suspension and applied voltage were optimized with respect to the rate of deposition and quality of the deposit. The NASICON (Na_3Zr_2Si_2PO_(12)) -based solid-state ionic conductor thick-film as a host ceramic with a guest Cu~+ ion has been produced as a noble phosphor thick-film by using an electrochemical ion doping method. The photoluminescence (PL) device of the NASICON:Cu~+ film showed good photo-luminescent peaks near 450-500nm depending on the host materials.