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Effect of Metal-Dielectric Interfaces on Tunability in Barium Strontium Titanate Thin-film Capacitor

机译:金属介电界面对钛酸锶锶薄膜电容器可调谐性的影响

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摘要

We investigated an influence of interface layer on a tunability of parallel plate (Ba, Sr)TiO_3 thin film capacitors. BST thin film capacitors with top electrode of Pt, Au and Ag were fabricated. BST films had thickness of 40, 60, 80 and 120nm. The tunability increased with increasing the BST film thickness. Considering the interfaces between BST films and electrodes as Schottky junctions, depletion layers were formed in the interfaces depending on the difference of the work function of metal electrodes. Larger external bias voltages were applied to the depletion layer than interior BST film, because the permittivity in the depletion layer was smaller than that in interior BST film. Therefore, the depletion layer lowered the tunability. Tunability decreased with increasing the thickness of the depletion layers.
机译:我们研究了界面层对平行平板(Ba,Sr)TiO_3薄膜电容器的可调性的影响。制作了顶电极为Pt,Au和Ag的BST薄膜电容器。 BST膜的厚度为40、60、80和120nm。可调性随着BST膜厚度的增加而增加。将BST膜与电极之间的界面视为肖特基结,根据金属电极的功函数的不同,在界面上形成耗尽层。由于耗尽层中的介电常数小于内部BST膜中的介电常数,因此与内部BST膜相比,将更大的外部偏置电压施加到耗尽层。因此,耗尽层降低了可调性。可调性随耗尽层厚度的增加而降低。

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