首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Effect of incident angle of off-axis illumination on pattern printability in extreme ultraviolet lithography
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Effect of incident angle of off-axis illumination on pattern printability in extreme ultraviolet lithography

机译:离轴照明的入射角对极紫外光刻中图案可印刷性的影响

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The effect of the incident angle of off-axis illumination on the printability of 22-nm-wide line patterns was investigated for three absorber stack configurations. Shadowing due to off-axis illumination and the absorber wall degrades printability, especially for a dense pattern layout. It was found that the influence of shadowing on resolution and pattern fidelity could be suppressed by employing a small incident angle and thin buffer and absorber films. An incident angle below 6.0°and an absorber stack with an optical density of 2.0 provide a practical level of pattern fidelity. Furthermore, a small incident angle below 5.0°and a thin absorber stack eliminate differences in fidelity for patterns with different orientations with respect to the direction of the off-axis light incident on a mask.
机译:对于三种吸收体堆叠结构,研究了轴外照明的入射角对22 nm宽线条图案可印刷性的影响。偏轴照明和吸收体壁造成的阴影会降低可印刷性,尤其是对于密集的图案布局而言。发现通过采用小的入射角以及薄的缓冲和吸收膜可以抑制阴影对分辨率和图案保真度的影响。低于6.0°的入射角和光密度为2.0的吸收体叠层提供了实用的图案保真度。此外,低于5.0°的小入射角和薄的吸收体叠层消除了相对于入射在掩模上的离轴光的方向具有不同取向的图案的保真度差异。

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