首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions
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Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions

机译:线边缘粗糙度和临界尺寸变化:使用模型函数进行分形表征和比较

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Line edge (or width) roughness (LER or LWR) of photoresists lines constitutes a serious issue in shrinking the critical dimensions (CD) of the gates to dimensions of a few tens of nanometers. In this article, we address the problem of the reliable LER characterization as well as the association of LWR with the CD variations. The complete LER characterization requires more parameters than the rms value sigma since the latter neglects the spatial aspects of LER and does not predict the dependence on the length of the measured line. The further spatial LER descriptors may be the correlation length xi and the roughness exponent alpha, which can be estimated through various methods. One aim of the present work is to perform a systematic comparative study of these methods using model edges generated by a roughness algorithm, in order to show their advantages and disadvantages for a reliable and accurate determination of the spatial LER parameters. In particular, we compare the results from (a) the study of the height-height correlation function (HHCF), (b) the Fourier [or power spectrum (PS)] analysis, and (c) the variation of rms value sigma with measured line edge L [ sigma(L) curve]. It is found that the HHCF can be considered approximately a rescaled version of sigma(L) and that the value of sigma becomes almost independent of the measured edge length for lengths larger than ten times the correlation length. As regards the PS, it is shown that the finite length of the edge may harmfully affect the reliable estimation of alpha and xi. Finally, we confirm theoretically and generalize an experimental observation [Leunissen et al., Microelectron. Eng. (to be published)] regarding the relationship between LWR and the sigma of the CD variations within a die of a wafer. It is shown that they behave in a complimentary way as line length increases so that the sum of their squares remains constant and equal to the square of the LWR sigma of the infinite line. (C) 2004 American Vacuum Society.
机译:光致抗蚀剂线的线边缘(或宽度)粗糙度(LER或LWR)在将栅极的临界尺寸(CD)缩小到几十纳米的尺寸方面构成严重的问题。在本文中,我们解决了可靠的LER表征以及LWR与CD变化之间的关联的问题。完整的LER表征比rms值sigma需要更多的参数,因为后者忽略了LER的空间方面,并且无法预测对测量线长度的依赖性。进一步的空间LER描述符可以是相关长度xi和粗糙度指数α,其可以通过各种方法来估计。本工作的一个目标是使用由粗糙度算法生成的模型边缘对这些方法进行系统的比较研究,以显示它们在可靠而准确地确定空间LER参数方面的优缺点。特别是,我们比较(a)高度-高度相关函数(HHCF),(b)傅里叶[或功率谱(PS)]分析和(c)均方根值σ与测量的线边缘L [sigma(L)曲线]。已经发现,HHCF可以看作是sigma(L)的近似缩放版本,并且对于大于相关长度十倍的长度,sigma的值几乎与测量的边长无关。关于PS,表明边缘的有限长度可能有害地影响alpha和xi的可靠估计。最后,我们在理论上进行了确认并概括了实验观察结果[Leunissen等,微电子学。 。 (将要出版)]关于LWR与晶圆管芯内CD变化的sigma之间的关系。结果表明,随着线长度的增加,它们以互补的方式工作,因此它们的平方和保持恒定并等于无限线的LWR sigma的平方。 (C)2004年美国真空学会。

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