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Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy

机译:Mn和Be共掺杂GaAs的低温迁移增强外延法实现高空穴浓度

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We report the effect of codoping of Mn-Be and the modified doping on an increment of the total hole concentration. Both the Mn-doped and Be-doped samples exhibit hole concentrations higher than 1 x 10(19) cm(-3) at room temperature. In contrast, the Mn-Be codoped sample shows a remarkable decrease in its hole concentration and mobility. Therefore, the resistivity is increased by more than 10(2) times of the Be-doped sample. This dramatic deterioration is probably caused by the complex defects due to the codoping. We performed the spatially separated doping of Mn and Be in GaAs and found that the hole concentration increases and the mobility shows no decrease for this sample. It is expected that the complex defect concentration is decreased considerably. (C) 2004 American Vacuum Society.
机译:我们报告了Mn-Be共掺杂和改性掺杂对总空穴浓度增加的影响。 Mn掺杂和Be掺杂的样品在室温下都显示出高于1 x 10(19)cm(-3)的空穴浓度。相反,Mn-Be共掺杂样品的空穴浓度和迁移率显着降低。因此,电阻率是被Be掺杂样品的10倍以上。这种急剧的恶化可能是由于共掺杂导致的复杂缺陷所致。我们在GaAs中进行了空间分离的Mn和Be掺杂,发现该样品的空穴浓度增加而迁移率没有降低。预期复杂缺陷浓度将大大降低。 (C)2004年美国真空学会。

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