首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Etch rate and surface morphology control in photoelectrochemical etching of GaN
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Etch rate and surface morphology control in photoelectrochemical etching of GaN

机译:GaN光电腐蚀中的腐蚀速率和表面形貌控制

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The dependence of the etch rate and etch morphology on photoelectrochemical (PEC) process conditions is reported. Considerable control over the etch rate and surface roughness can be exerted through selection of the electrolyte concentration, illumination intensity, as well as-through the use of bias voltage applied during the PEC etch process. The etch rate for n-type GaN was dramatically enhanced from 10 to 32 nm/min by the application of +2 V bias during PEC etching. In addition, the surface morphology can be controlled by applying a bias voltage; smooth etched surfaces with root-mean-square (rms) roughness of 0.5 nm have been obtained with bias of +0.65 V, comparable to as-grown surfaces, compared to a rms roughness of 8 nm when no bias is applied. The use of reverse bias voltages was found to suppress PEC etching and produce rough surfaces. The etch rate and morphology have been found to depend on the n-type GaN doping density, with highly doped material resulting in slower etch rates and rougher surfaces than for lightly doped material under the same etch conditions. (C) 2004 American Vacuum Society.
机译:报告了蚀刻速率和蚀刻形态对光电化学(PEC)工艺条件的依赖性。通过选择电解质浓度,照明强度以及使用在PEC蚀刻过程中施加的偏置电压,可以对蚀刻速率和表面粗糙度进行适当的控制。通过在PEC蚀刻过程中施加+2 V偏压,n型GaN的蚀刻速率从10 nm / min显着提高到了32 nm / min。另外,可以通过施加偏压来控制表面形态。与未使用表面时的均方根粗糙度为8 nm相比,已获得了与已生长表面相当的,具有+0.65 V偏置的,均方根(rms)粗糙度为0.5 nm的平滑蚀刻表面。发现使用反向偏置电压可以抑制PEC蚀刻并产生粗糙的表面。已经发现蚀刻速率和形态取决于n型GaN的掺杂密度,在相同的蚀刻条件下,与轻掺杂材料相比,高掺杂材料导致蚀刻速率更慢且表面更粗糙。 (C)2004年美国真空学会。

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