首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Initial oxide/SiC interface formation on C-terminated beta-SiC(100) c(2X2) and graphitic C-rich beta-SiC(100) 1X1 surfaces
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Initial oxide/SiC interface formation on C-terminated beta-SiC(100) c(2X2) and graphitic C-rich beta-SiC(100) 1X1 surfaces

机译:在C终止的beta-SiC(100)c(2X2)和富石墨的beta-SiC(100)1X1表面上的初始氧化物/ SiC界面形成

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We investigate the initial interface formation of oxide/C-terminated beta-SiC(100) c(2 x 2) and oxide/C-rich beta-SiC(100) 1 x 1 surfaces by Si 2p and C 1s core level photoemission spectroscopy using synchrotron radiation. Contrary to the Si-rich SiC surfaces, the C-terminated and C-rich surfaces are much less reactive to oxygen, with much higher exposures and temperatures required to grow a significant amount. of oxides. This leads to nonabrupt oxide/SiC interface formation including predominantly mixed oxide products containing carbon species, with marginal amounts of SiO2 only. The lack of dangling bonds on the surface together with the C plane and/or graphitic species limiting oxygen insertion into the SiC lattice are likely at the origin of this very different behavior when compared to Si-rich SiC surfaces. (C) 2004 American Vacuum Society.
机译:我们通过Si 2p和C 1s核心能级光发射光谱研究了氧化物/ C终止的beta-SiC(100)c(2 x 2)和富含氧化物/ C的beta-SiC(100)1 x 1表面的初始界面形成使用同步辐射。与富含Si的SiC表面相反,C端和C富集的表面对氧气的反应性要差得多,暴露大量的氧气和大量生长所需的温度。的氧化物。这导致形成不间断的氧化物/ SiC界面,包括主要混合的含碳物质的氧化物产物,仅含少量的SiO2。与富Si的SiC表面相比,这种悬而未决的行为可能是由于表面上没有悬挂键以及C平面和/或石墨物种限制氧插入SiC晶格。 (C)2004年美国真空学会。

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