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Exciton-Phonon Interactions Govern Charge-Transfer-State Dynamics in CdSe/CdTe Two-Dimensional Colloidal Heterostructures

机译:激子-声子相互作用控制CdSe / CdTe二维胶体异质结构中的电荷转移态动力学。

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摘要

CdSe/CdTe core-crown type-II nanoplatelet heterostructures are two-dimensional semiconductors that have attracted interest for use in light-emitting technologies due to their ease of fabrication, outstanding emission yields, and tunable properties. Despite this, the exciton dynamics of these complex materials, and in particular how they are influenced by phonons, is not yet well understood. Here, we use a combination of femtosecond vibrational spectroscopy, temperature-resolved photoluminescence (PL), and temperature-dependent structural measurements to investigate CdSe/CdTe nanoplatelets with a thickness of four monolayers. We show that charge-transfer (CT) excitons across the CdSe/CdTe interface are formed on two distinct time scales: initially from an ultrafast (similar to 70 fs) electron transfer and then on longer time scales (similar to 5 ps) from the diffusion of domain excitons to the interface. We find that the CT excitons are influenced by an interfacial phonon mode at similar to 120 cm(-1), which localizes them to the interface. Using low-temperature PL spectroscopy we reveal that this same phonon mode is the dominant mechanism in broadening the CT PL. On cooling to 4 K, the total PL quantum yield reaches close to unity, with an,similar to 85% contribution from CT emission and the remainder from an emissive sub-band-gap state. At room temperature, incomplete diffusion of domain excitons to the interface and scattering between CT excitons and phonons limit the PL quantum yield to,similar to 50%. Our results provide a detailed picture of the nature of exciton-phonon interactions at the interfaces of 2D heterostructures and explain both the broad shape of the CT PL spectrum and the origin of PL quantum yield losses. Furthermore, they suggest that to maximize the PL quantum yield both improved engineering of the interfacial crystal structure and diffusion of domain excitons to the interface, e.g., by altering the relative core/crown size, are required.
机译:CdSe / CdTe核冠型II型纳米片异质结构是二维半导体,由于其易于制造,出众的发射率和可调节的特性,引起了人们对发光技术的关注。尽管如此,对这些复杂材料的激子动力学,尤其是它们如何受到声子的影响,仍未得到很好的理解。在这里,我们结合使用飞秒振动光谱,温度分辨的光致发光(PL)和依赖温度的结构测量来研究具有四个单层厚度的CdSe / CdTe纳米片。我们表明,跨CdSe / CdTe界面的电荷转移(CT)激子是在两个不同的时间尺度上形成的:最初是从超快(类似于70 fs)电子转移,然后是更长的时间尺度(类似于5 ps)。域激子向界面的扩散。我们发现,CT激子受界面声子模式的影响,类似于120 cm(-1),这将它们定位在界面上。使用低温PL光谱,我们揭示了相同的声子模式是扩大CT PL的主要机制。冷却至4 K时,总PL量子产率接近于1,其中约有85%来自CT发射,其余来自发射子带隙状态。在室温下,畴激子不完全扩散到界面上,CT激子和声子之间的散射将PL量子产率限制在50%左右。我们的结果提供了2D异质结构界面处激子-声子相互作用性质的详细图片,并解释了CT PL谱的宽形和PL量子产率的损失。此外,他们建议,为了最大化PL量子产率,既需要改进界面晶体结构的工程设计,又需要例如通过改变相对的核/冠尺寸来使畴激子向界面扩散。

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  • 来源
    《Journal of the American Chemical Society》 |2018年第43期|14097-14111|共15页
  • 作者单位

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    PSL Res Univ, CNRS, ESPCI Paris, LPEM, 10 Rue Vauquelin, F-75005 Paris, France;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    Univ Cambridge, Inst Mfg, Dept Engn, 17 Charles Babbage Rd, Cambridge CB3 0FS, England;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

    PSL Res Univ, CNRS, ESPCI Paris, LPEM, 10 Rue Vauquelin, F-75005 Paris, France;

    Univ Cambridge, Cavendish Lab, JJ Thompson Ave, Cambridge CB3 OHE, England;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 04:09:37

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