In situ Negative Patterning of p-Silicon via Scanning Probe Lithography in HF/EtOH Liquid Bridges

摘要

Scanning probe lithography (SPL) has received much attention due to its applicability in many areas of nanotechnology,such as molecular electronic devices and nanosized biological sensors.Among the SPL techniques,the conductive atomic force microscope (AFM) technique that includes field-induced oxidation,mechanical scribing,and electrochemical dip-pen lithography is the most versatile and desirable technique for creating submicron- or nanosized structures.