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A General Low-Temperature Route for Large-Scale Fabrication of Highly Oriented ZnO Nanorod/Nanotube Arrays

机译:大规模制造高度取向的ZnO纳米棒/纳米管阵列的一般低温途径

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摘要

As a wide band gap semiconductor oxide with a large excitation binding energy (60 meV),zinc oxide becomes one of the most important functional materials with unique properties of near-UV emission,optical transparency,electric conductivity,and piezo electricity.Since the first report of ultraviolet lasing from ZnO nanorods,substantial effort has been devoted to the development of novel synthetic methodologies for one-dimensional (1D) ZnO nanostructures due to their promising applications in electronic and optoelectronic devices.Currently,large-scale low-cost controllable growth of well-aligned ZnO nanorods on properly fitting substrates is crucially expected for these novel applications.As the widely used high-temperature vapor-phase processes are expensive and energy-consuming,various solution-phase approaches to ZnO nanorods have recently attracted extensive interest because of their low growth temperatures (90-95degC) and good potential for scale-up.Among these reported approaches,the most successful one is based on the seeded growth of well-oriented ZnO nanorod arrays on ZnO-nanoparticle-coated substrates.However,the liquid-phase coating of the substrates with ZnO nanoparticles prepared in solution remains complex and difficult/irreproducible.Here,a conventional radio frequency magnetron-sputtering technique was utilized to simply prepare ZnO-film-coated substrates for subsequent growth of highly oriented ZnO nanorods.The highly oriented ZnO nanorods can be easily fabricated on ZnO-film-coated (arbitrary) substrates over a large area via a simple low-temperature solution route.This novel synthetic approach also allows further reducing the growth temperature to 65degC,leading to the development of an effective and low-cost fabrication process for high-quality ZnO nanorod arrays.Moreover,we report the low-temperature synthesis of hexagonal ZnO nanotube arrays,which can be formed on zinc foils in the same reaction system.
机译:氧化锌作为一种具有大激发键能(60 meV)的宽带隙半导体氧化物,成为最重要的功能材料之一,具有近紫外发射,光学透明性,电导率和压电的独特性能。 ZnO纳米棒紫外激光的研究报告,由于其在电子和光电设备中的应用前景广阔,已致力于开发用于一维(1D)ZnO纳米结构的新型合成方法。目前,大规模低成本可控增长对于这些新颖的应用,人们迫切期望在适当配合的基板上制备排列良好的ZnO纳米棒。由于广泛使用的高温气相工艺昂贵且耗能,因此,近年来,各种用于ZnO纳米棒的溶液相方法引起了广泛的关注,因为较低的生长温度(90-95摄氏度)和扩大规模的潜力。在这些已报道的方法中,最成功的方法是基于在ZnO纳米颗粒涂层的基底上定向生长的ZnO纳米棒阵列的种子生长。然而,在溶液中制备的ZnO纳米颗粒的液相液相涂层仍然复杂且困难/不可重现。传统的射频磁控溅射技术被用来简单地制备ZnO薄膜涂层的衬底,以用于随后生长高度取向的ZnO纳米棒。高度取向的ZnO纳米棒可以很容易地在大面积的ZnO薄膜涂层(任意)衬底上制造。这种新颖的合成方法还可以将生长温度进一步降低至65°C,从而为开发高质量ZnO纳米棒阵列的有效且低成本的制造工艺提供了方便。此外,我们报告了六方ZnO纳米管阵列的低温合成,可以在同一反应体系中在锌箔上形成。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2005年第8期|p.2378-2379|共2页
  • 作者单位

    Institute of Materials Research & Engineering and Department of Materials Science,National University of Singapore,3 Research Link,Singapore 117602;

    Institute of Materials Research & Engineering and Department of Materials Science,National University of Singapore,3 Research Link,Singapore 117602;

    Institute of Materials Research & Engineering and Department of Materials Science,National University of Singapore,3 Research Link,Singapore 117602;

    Institute of Materials Research & Engineering and Department of Materials Science,National University of Singapore,3 Research Link,Singapore 117602;

    Institute of Materials Research & Engineering and Department of Materials Science,National University of Singapore,3 Research Link,Singapore 117602;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

  • 入库时间 2022-08-18 03:23:49

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