机译:具有可调带隙的形状控制单分散纤锌矿Culn_xGa_(1-x)S_2半导体纳米晶体的合成
Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, United States;
Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, United States,School of Chemistry and Chemical Engineering, Southeast University, Nanjing,P. R. China;
Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, United States,State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing University of Technology, Nanjing, P. R. China;
School of Chemistry and Chemical Engineering, Southeast University, Nanjing,P. R. China;
Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, United States;
机译:Culn_xGa_(1-x)S2纳米晶体具有可调节的组成和通过无磷的可扩展程序合成的带隙
机译:(ZnS)_x(Cu_2SnS_3)_(1-x)1和(CuInS_2)_x(Cu_2SnS_3)_(1-x)纳米晶合金,具有任意成分和宽的可调节带隙
机译:在Cu2ZnSn(S_x,Se_(1-x)4)纳米晶体上轻松,低成本地合成有前途的吸收体材料
机译:Cu(Al_xIn_(1-x))S_2(0≤x≤1)系列黄铜矿半导体的结构和能带特性
机译:具有可调直接带隙的新型锡锗硅半导体的合成。
机译:带隙可调的可控组成的Cu2(Sn1-xGex)S3纳米晶体的合成
机译:单分散金纳米晶体和金基杂化纳米晶体的形状控制合成
机译:在si(0(le)x(le)上生长的si(sub 1-x)C(sub x)和si(sub 1-x)Ge(sub x)C(sub y)半导体合金的介电函数和带隙0.014)