Tunable Charge-Transport Properties of I_h-C_(80) Endohedral Metallofullerenes: Investigation of La_2@C_(80), Sc_3N@C(80), and Sc_3C_2@C(80)

摘要

Fullerene crystals or films have drawn much interest because they are good candidates for use in the construction of electronic devices. The results of theoretical calculations revealed that the conductivity properties of I_h-C_(80) endohedral metallofullerenes (EMFs) vary depending on the encapsulated metal species. We experimentally investigated the solid-state structures and charge-carrier mobilities of I_h-C_(80) EMFs La_2@C_(80), Sc_3N@C(80), Sc_3N@C_(80), and Sc_3C_2@C(80). The thin film of Sc_3C_2@C(80) exhibits a high electron mobility μ = 0.13 cm~2 V~(-1) s~(-1) under normal temperature and atmospheric pressure, as determined using flash-photolysis time-resolved microwave conductivity measurements. This electron mobility is 2 orders of magnitude higher than the mobility of La_2@C_(80) or Sc_3N@C(80).