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Redox Control and High Conductivity of Nickel Bis(dithiolene) Complex π-Nanosheet: A Potential Organic Two-Dimensional Topological Insulator

机译:双(二硫代镍)镍复合π-纳米片的氧化还原控制和高电导率:一种潜在的有机二维拓扑绝缘体。

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摘要

A bulk material comprising stacked nano-sheets of nickel bis(dithiolene) complexes is investigated. The average oxidation number is -3/4 for each complex unit in the as-prepared sample; oxidation or reduction respectively can change this to 0 or -1. Refined electrical conductivity measurement, involving a single microflake sample being subjected to the van der Pauw method under scanning electron microscopy control, reveals a conductivity of 1.6 × 10~2 S cm~(-1), which is remarkably high for a coordination polymeric material. Conductivity is also noted to modulate with the change of oxidation state. Theoretical calculation and photoelectron emission spec-troscopy reveal the stacked nanosheets to have a metallic nature. This work provides a foothold for the development of the first organic-based two-dimensional topological insulator, which will, require the precise control of the oxidation state in the single-layer nickel bisdithiolene complex nanosheet (cf. Liu, F. et al. Nano Lett. 2013, 13, 2842).
机译:研究了包含双(二硫代镍)镍配合物的堆叠纳米片的块状材料。所制备样品中每个复杂单元的平均氧化数为-3/4;氧化或还原可以分别将其更改为0或-1。精细的电导率测量涉及单个微片样品在扫描电子显微镜控制下接受van der Pauw方法,显示出1.6×10〜2 S cm〜(-1)的电导率,对于配位聚合材料而言非常高。还注意到电导率随氧化态的变化而调节。理论计算和光电子发射光谱表明,堆叠的纳米片具有金属性质。这项工作为开发第一个基于有机物的二维拓扑绝缘体提供了立足之地,这将需要精确控制单层双二硫代镍配合物镍纳米片中的氧化态(参见Liu,F.等。纳米Lett.2013,13,2842)。

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  • 来源
    《Journal of the American Chemical Society》 |2014年第41期|14357-14360|共4页
  • 作者单位

    Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Physics, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States;

    Department of Physics, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan,Department of Condensed Matter Physics, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8551, Japan;

    Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;

    Department of Physics, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States;

    Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

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