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Hole Transfer Processes in meta- and para-Conjugated Mixed Valence Compounds: Unforeseen Effects of Bridge Substituents and Solvent Dynamics

机译:间共轭和对位共轭混合价化合物的空穴转移过程:桥取代基和溶剂动力学的意外影响

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摘要

To address the question whether donor substituents can be utilized to accelerate the hole transfer (HT) between redox sites attached in para- or in mete-positions to a central benzene bridge, we investigated three series of mixed valence compounds based on triarylamine redox centers that are connected to a benzene bridge via alkyne spacers at para- and mete-positions. The electron density at the bridge was tuned by substituents with different electron donating or accepting character. By analyzing optical spectra and by DFT computations we show that the HT properties are independent of bridge substituents for one of the meta-series, while donor substituents can strongly decrease the intrinsic barrier in the case of the para-series. In stark contrast, temperature-dependent ESR measurements demonstrate a dramatic increase of both the apparent barrier and the rate of HT for strong donor substituents in the para-cases. This is caused by an unprecedented substituent-dependent change of the HT mechanism from that described by transition state theory to a regime controlled by solvent dynamics. For solvents with slow longitudinal relaxation (PhNO_2, oDCB), this adds an additional contribution to the intrinsic barrier via the dielectric relaxation process. Attaching the donor substituents to the bridge at positions where the molecular orbital coefficients are large accelerates the HT rate for mete-conjugated compounds just as for the para-series. This effect demonstrates that the para-meta paradigm no longer holds if appropriate substituents and substitution patterns are chosen, thereby considerably broadening the applicability of mete-topologies for optoelectronic applications.
机译:为了解决供体取代基是否可用于加速对位或对位与中央苯桥连接的氧化还原位点之间的空穴转移(HT)的问题,我们研究了基于三芳基胺氧化还原中心的三组混合化合价化合物通过对位和对位的炔烃间隔基连接到苯桥。电桥处的电子密度通过具有不同电子给体或接受性的取代基进行调节。通过分析光谱和通过DFT计算,我们表明HT特性与该间系列之一的桥取代基无关,而在对系列的情况下,供体取代基可以大大降低本征壁垒。与之形成鲜明对比的是,温度依赖性的ESR测量表明,在特殊情况下,表观势垒和强供体取代基的HT速率均显着增加。这是由于HT机理发生了前所未有的取代基依赖性变化,从过渡态理论到溶剂动力学控制的机理。对于纵向弛豫缓慢的溶剂(PhNO_2,oDCB),这会通过介电弛豫过程为本征势垒增加额外的贡献。与对位系列一样,将供体取代基连接到分子轨道系数较大的位置的桥上,可以加快mete共轭化合物的HT速率。该效果表明,如果选择合适的取代基和取代方式,则超准范式将不再成立,从而大大拓宽了气象拓扑在光电应用中的适用性。

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  • 来源
    《Journal of the American Chemical Society》 |2017年第17期|6200-6209|共10页
  • 作者单位

    Institut fur Organische Chemie and Center for Nanosystems Chemistry, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;

    Institut fur Organische Chemie and Center for Nanosystems Chemistry, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;

    Institute of Physical and Theoretical Chemistry, Graz University of Technology, Stremayrgasse 9, A-8010 Graz, Austria;

    Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, OX1 3QZ, U.K.;

    Institut fur Anorganische Chemie, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;

    Institut fur Anorganische Chemie, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;

    Institute of Physical and Theoretical Chemistry, Graz University of Technology, Stremayrgasse 9, A-8010 Graz, Austria;

    Institut fur Organische Chemie and Center for Nanosystems Chemistry, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 入库时间 2022-08-18 03:07:57

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