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首页> 外文期刊>Journal of Solid State Electrochemistry >Aluminium anodising in low acidity sulphate baths: growth mechanism and nanostructure of porous anodic films
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Aluminium anodising in low acidity sulphate baths: growth mechanism and nanostructure of porous anodic films

机译:低酸度硫酸盐浴中的铝阳极氧化:多孔阳极膜的生长机理和纳米结构

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摘要

Overall kinetic and chronopotentiometric studies were performed during Al anodising in H2SO4, 0–5% w/v, bath solutions pure and saturated by Al2(SO4)3. Peculiarities in film growth mechanism and nanostructure in these cases appeared, like significant differences of porosity and its dependence on film thickness, different critical current density above which pitting appears, salt deposition on pitted surface regions in saturated bath, etc. The different conditions inside pores are responsible for this behaviour like almost depletion of H+ during a long initial transient stage in the first case, supersaturation and formation of Al2(SO4)3 nanoparticle micelles on pore surface in the second case, etc. Differences in film growth mechanism also appeared between these and alike baths at higher acidity. Anodising in low acidity saturated baths shows superiority for growing low porosity films at specific conditions. New technologies may be suggested to produce optimal films of desired structure.
机译:在Al阳极氧化H2 SO4 ,0–5%w / v,纯Al2 (SO4 )3和饱和的浴液过程中进行了整体动力学和计时电位研究。 / sub>。在这些情况下,出现了膜生长机理和纳米结构的特殊性,例如孔隙率的显着差异及其对膜厚度的依赖性,临界电流密度不同(高于此值会出现点蚀),盐在饱和浴中的点蚀表面区域上的沉积等。孔内的不同条件造成这种现象的原因包括:在第一种情况下,在很长的初始瞬态阶段H + 几乎耗尽,孔中Al2 (SO4 )3 纳米微粒胶束的过饱和和形成在较高酸度下,这些浴和类似浴之间也出现了膜生长机理的差异。在特定条件下,低酸度饱和浴中的阳极氧化显示出低孔隙率膜生长的优越性。可以建议使用新技术来生产具有所需结构的最佳薄膜。

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