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Three-Dimensional Model for Erosion of a Hall-Effect Thruster Discharge Channel Wall

机译:霍尔效应推进器排放通道壁冲蚀的三维模型

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摘要

The erosion of the channel wall in Hall-effect thrusters limits the maximum thruster operating lifetime. Hall-effect thruster channel wall materials are often binary composites of BN and SiO_2. The heterogeneity of the material drives the development of complex surface features and roughness during the erosion process. A three-dimensional model of the atomic sputtering of a heterogeneous material is developed. The model investigates, through a ray-tracing technique and empirical erosion rate models of each phase, the interaction between the plasma and the material microstructure. Simulated surface profiles are compared with experimental data collected from the eroded channel wall of the U.S. Air Force Research Laboratory/University of Michigan P5 Hall-effect thruster. The channel wall is composed of M26, a BN-SiO_2 composite material. Simulated surface features and roughnesses for an ion incidence angle of 30 deg resemble those observed through scanning electron microscopy and optical profilometry of the P5 channel wall. Predicted root mean square roughnesses, for 30 deg ion incidence, of 8 μm are within 33% of the 6 ± 2.5 μm root mean square measured experimentally. The composition of the channel wall surface is investigated via x-ray photoelectron spectroscopy and is comparable to prior work, but the reduction in the presence of BN with erosion is not adequately captured by this model.
机译:霍尔效应推进器中通道壁的腐蚀限制了最大推进器的使用寿命。霍尔效应推进器通道壁材料通常是BN和SiO_2的二元复合材料。在腐蚀过程中,材料的异质性推动了复杂表面特征和粗糙度的发展。建立了异质材料原子溅射的三维模型。该模型通过射线追踪技术和每个相的经验腐蚀速率模型研究等离子体与材料微结构之间的相互作用。将模拟的表面轮廓与从美国空军研究实验室/密歇根大学P5霍尔效应推进器腐蚀的通道壁收集的实验数据进行比较。通道壁由BN-SiO_2复合材料M26组成。离子入射角为30度的模拟表面特征和粗糙度类似于通过P5通道壁的扫描电子显微镜和光学轮廓测量法观察到的那些。对于30度离子入射,8μm的预测均方根粗糙度在实验测量的6±2.5μm均方根的33%以内。通道壁表面的组成通过X射线光电子能谱进行了研究,与先前的工作相当,但是该模型未能充分捕获存在BN的侵蚀引起的减少。

著录项

  • 来源
    《Journal of propulsion and power》 |2014年第5期|1373-1382|共10页
  • 作者单位

    Georgia Institute of Technology, Atlanta, Georgia 30332;

    Georgia Institute of Technology, Atlanta, Georgia 30332;

    Georgia Institute of Technology, Atlanta, Georgia 30332;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:17:40

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