首页> 外文期刊>Journal of Parallel and Distributed Computing >Racetrack Memory based hybrid Look-Up Table (LUT) for low power reconfigurable computing
【24h】

Racetrack Memory based hybrid Look-Up Table (LUT) for low power reconfigurable computing

机译:基于赛马场存储器的混合查找表(LUT),用于低功耗可重配置计算

获取原文
获取原文并翻译 | 示例
           

摘要

The large area and high power consumption are the two main bottlenecks in the conventional SRAM-based Field Programmable Gate Arrays (FPGAs). In recent works, resistive Non-Volatile Memories (NVMs) have been widely proposed to tackle the above issues in the reconfigurable computing systems, due to their non-volatility, fast read/write speed and high-density. The magnetic Domain-Wall (DW) Racetrack Memory (RM) is the emerging NVM with the great prospect of the development of the low-power and high-density circuits and systems. This paper presents RM based single-context and multi-context hybrid Look-Up Tables (LUTs). The hybrid structure allows the LUT to support both volatile input (low-power and high-speed input) and non-volatile input. The non-volatile input is used to reduce the leakage power and also to provide additional reusable resources to increase the hardware utilization. Compared to the SRAM-based 6-input LUT, the proposed non-volatile LUT reduces the number of transistors and leakage power by 80.2% and 84.2%, respectively. The proposed design also reduces the leakage power of the conventional 6-input non-volatile LUT by 17.4% with 27.3% fewer transistors and 36% faster operation speed. The Verilog-to-Routing (VTR) simulation results show that the proposed 6-input LUT consumes 27.1% less power than the SRAM-based counterpart. It may also provide 15.2% additional reusable resource. The context of the proposed multi-context LUT can be switched in 4 ns with the context switching energy of 397.24 fJ/LUT.
机译:大面积和高功耗是传统的基于SRAM的现场可编程门阵列(FPGA)的两个主要瓶颈。在最近的工作中,由于其非易失性,快速的读/写速度和高密度,已经广泛提出了电阻性非易失性存储器(NVM)来解决可重构计算系统中的上述问题。磁畴壁(DW)赛马场存储器(RM)是新兴的NVM,具有发展低功耗和高密度电路和系统的广阔前景。本文介绍了基于RM的单上下文和多上下文混合查找表(LUT)。混合结构允许LUT支持易失性输入(低功率和高速输入)和非易失性输入。非易失性输入用于减少泄漏功率,并提供其他可重复使用的资源以提高硬件利用率。与基于SRAM的6输入LUT相比,该非易失性LUT分别将晶体管的数量和泄漏功率降低了80.2%和84.2%。提出的设计还将传统的6输入非易失性LUT的泄漏功率降低了17.4%,晶体管数量减少了27.3%,运算速度提高了36%。 Verilog到路由(VTR)仿真结果表明,与基于SRAM的同类产品相比,拟议的6输入LUT功耗降低了27.1%。它还可能提供15.2%的额外可重用资源。所提出的多上下文LUT的上下文可以在4ns内切换,上下文切换能量为397.24 fJ / LUT。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号