首页> 外文期刊>The Journal of Organic Chemistry >Isomerically Pure Anthra[2,3?b:6,7?b′]-difuran (anti-ADF), -dithiophene (anti-ADT), and -diselenophene (anti-ADS): Selective Synthesis, Electronic Structures, and Application to Organic Field-Effect Transistors
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Isomerically Pure Anthra[2,3?b:6,7?b′]-difuran (anti-ADF), -dithiophene (anti-ADT), and -diselenophene (anti-ADS): Selective Synthesis, Electronic Structures, and Application to Organic Field-Effect Transistors

机译:异构纯蒽[2,3?b:6,7?b']-二呋喃(抗ADF),-二噻吩(抗ADT)和-二硒吩(抗ADS):选择性合成,电子结构和应用到有机场效应晶体管

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A new straightforward synthesis of isomerically purenanthra[2,3-b:6,7-b′] -difuran (anti-ADF), -dithiophene (anti-ADT),nand -diselenophene (anti-ADS) from readily available 2,6-ndimethoxyanthracene is described. The present successful synthesisnmakes it possible to overview the linear-shaped anti-acenedichalcogenophenencompounds, that is, benzo[1,2-b:4,5-b′]-, naphtho[2,3-nb:6,7-b′]-, and anthra[2,3-b:6,7-b′]- difuran, -dithiophene, andn-diselenophene. By comparing their electrochemical and photochemicalnproperties, the electronic structures of acenedichalcogenophenesncan be expressed as the outcome of balance between thencentral acene core and the outermost chalcogenophene rings.nAmong isomerically pure parent anti-anthradichalcogenophenes,nanti-ADT and anti-ADS can afford crystalline thin films by vaporndeposition, which acted as active layer in organic field-effect transistors with mobility as high as 0.3 cm2 V−1 s−1 for ADT and 0.7ncm2 V−1 s−1 for ADS. The mobility of isomerically pure anti-ADT is higher by several times than those reported for isomercallynmixed ADT, implying that the isomeric purity could be beneficial for realizing the better FET mobility. We also tested thendiphenyl derivatives of anti-ADF, -ADT, and -ADS as the active material for OFET devices, which showed high mobility of up ton1.3 cm2 V−1 s−1.
机译:一种新的直接合成的异构体纯nanthra [2,3-b:6,7-b']-二呋喃(抗ADF),-二噻吩(抗ADT),和-二硒吩戊烯(抗ADS),可以从现有的2,描述了6-正二甲氧基蒽。目前成功的合成方法使我们有可能概述线性抗乙酰苯丙氨酸苯酚化合物,即苯并[1,2-b:4,5-b']-,萘并[2,3-nb:6,7-b' ]-和蒽[2,3-b:6,7-b']-二呋喃,-二噻吩和正二硒基。通过比较它们的电化学性质和光化学性质,可以将a烯二茂铁烯的电子结构表示为中心并苯芯与最外层硫属茂铁环之​​间平衡的结果。在异构纯的母体抗蒽硫属茂铁,n-ADT和抗ADS中,可以制得结晶薄膜气相沉积,用作有机场效应晶体管的有源层,对于ADT,迁移率高达0.3 cm2 V-1 s-1,对于ADS,迁移率高达0.7ncm2 V-1 s-1。异构纯抗ADT的迁移率比异构Callynmixed ADT报道的迁移率高几倍,这意味着异构体纯度可能有利于实现更好的FET迁移率。我们还测试了抗ADF,-ADT和-ADS的二苯基衍生物作为OFET装置的活性材料,它们显示出高达ton1.3 cm2 V-1 s-1的迁移率。

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