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Effects of dislocation shielding on interface crack initiation and growth in metal/ceramic layered materials

机译:位错屏蔽对金属/陶瓷层状材料界面裂纹萌生和扩展的影响

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Interface crack initiation and growth in layered materials are investigated in this paper for mixed mode I and mode II loading. The dislocation plasticity in the metal layer is considered, and the energy for initial emission of a dislocation is assumed to be attained before the cleavage of the interface crack. Superdislocation modeling is employed to obtain the critical strain energy release rate, for crack initiation and growth. When a stress separation law is satisfied at the interface crack tip, interface debonding occurs and the crack propagates with an atomically sharp tip until interactions with other slip sources cause arresting by a new blunting event. This process repeats itself periodically, and based on this process, interface crack growth is simulated until a steady-state condition is reached. This model predicts the strong dependence of interfacial fracture toughness on mixed mode loading. The role of the metal layer thickness and interfacial strength is also investigated.
机译:本文针对I型和II型混合载荷对分层材料中的界面裂纹萌生和扩展进行了研究。考虑到金属层中的位错可塑性,并且假定在界面裂纹劈裂之前获得了用于位错的初始发射的能量。采用超位错模型来获得临界应变能释放速率,以用于裂纹萌生和扩展。当在界面裂纹尖端处满足应力分离定律时,会发生界面剥离,并且裂纹会以原子尖锐的尖端传播,直到与其他滑移源的相互作用导致新的钝化事件阻止为止。此过程定期重复进行,并基于此过程模拟界面裂纹的扩展,直到达到稳态条件为止。该模型预测界面断裂韧性对混合模式载荷的强烈依赖性。还研究了金属层厚度和界面强度的作用。

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