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Mechanical behavior of a pm-sized single crystal silicon structure with sharp notches

机译:微米级单晶硅结构的机械性能,带有尖锐的缺口

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The mechanical behavior of μm-sized single crystal silicon structures is investigated in this paper. A new apparatus for microsample tensile testing is used to determine the mechanical properties of single crystal silicon microbars. Force and elongation are measured independently with high accuracy. Elastic constants as well as critical loads are determined. Failure of the sample occurs at the extremities of the microbar at a sharp notch. The stress field in the notch tip vicinity is therefore analyzed to characterize the load capacity of the structure. For this purpose, finite element computations are combined with approximate analytic solutions based on the Stroh formalism. Both the case of plane stress and two-dimensional displacements are considered. Comparison with the FEM solution shows that the plane stress assumption is better, leading to the determination of the critical stress intensity factor Fcr for this case. Because F_cr is dependent on the geometry, a new scalar failure criterion--i.e. a critical radius R_cr--is introduced and derived from the calculated stress field at the notch. It is based on a comparison of stored elastic energy and surface energy at the critical location. Because it is a scalar criterion, it can be applied to single crystal microstructures with notches of arbitrarv notch angle. For the case considered, experiments yield Rcr = 0.8 nm. The proposed criterion can be considered as a step towards the definition of a design rule for sharp notches in single crystal structures, which is required for the optimized design of micromechanical devic
机译:本文研究了微米大小的单晶硅结构的力学行为。一种用于微样品拉伸测试的新设备用于确定单晶硅微棒的机械性能。力和伸长率可以高精度独立测量。确定弹性常数以及临界载荷。样品的失效发生在微棒的末端,并带有明显的缺口。因此,分析了缺口尖端附近的应力场,以表征结构的承载能力。为此,将有限元计算与基于Stroh形式主义的近似解析解相结合。同时考虑了平面应力和二维位移的情况。与FEM解决方案的比较表明,平面应力假设更好,因此可以确定这种情况下的临界应力强度因子Fcr。由于F_cr取决于几何形状,因此有一个新的标量失效准则-即引入临界半径R_cr--并从缺口处的计算应力场中得出。它基于在关键位置存储的弹性能和表面能的比较。因为它是一个标量标准,所以它可以应用于具有任意缺口角的缺口的单晶微结构。对于这种情况,实验得出Rcr = 0.8 nm。拟议的标准可以被视为迈向为单晶结构中的尖锐缺口定义设计规则的一步,这是微机械装置优化设计所必需的

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