Performances of surface plasmon enhanced MgZnO ultraviolet photodetector based on parallel effect

摘要

The responsivity of surface plasmon (SP) modified metal-semiconductor-metal ultraviolet photodetectors (PDs) was increased from 1.15 × 10~(-3) to 2.5 × 10~(-3) AAV by varying the number of interdigitated electrode pairs. MgZnO films with Pt nanoparticles (NPs) having a grain size of 6.26 nm in a 25-pair interdigitated electrode arrangement showed improved responsivity and signal to noise ratio in comparison with the bare MgZnO PD. This improvement was attributed to both the enhanced conductivity and increased absorption resulting from the near-field enhancement of the SP. Parallel effect physical simulation results were in reasonable agreement with our experimental results.