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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Effect of heat-treatment on LaNiO{sub}3 film electrode of PZT thin films derived by a sol-gel method
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Effect of heat-treatment on LaNiO{sub}3 film electrode of PZT thin films derived by a sol-gel method

机译:热处理对溶胶-凝胶法制备PZT薄膜LaNiO {sub} 3薄膜电极的影响

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摘要

Lanthanum nickel oxide (LaNiO{sub}3 or LNO) conducting thin films that could be used as electrodes for improving fatigue and aging properties of ferroelectric thin films were investigated. In this paper, LNO films were directly spin-coated onto SiO{sub}2/Si(1 00) substrates followed by thermal treatment in air and in oxygen. It was found that crack-free dense and uniform films with good crystallinity and medium grains were obtained, preferentially (1 00)-oriented LNO thin films could be formed at a lower annealing temperature of 550℃ and that with the increase in thermal annealing temperature the LNO thin film possessed better electrical properties especially at 750℃. However, the LNO film displayed a structure transformation above 850℃. A phenomenon was found that the first heat-treatment temperature and time played a key role to determine the crystallite size of LNO films. A subsequent deposition of a sol-gel derived Pb(Zr{sub}0.53Ti{sub}0.47)O{sub}3 (PZT53/47) thin film on the LNO-coated SiO{sub}2/Si(1 00) substrates was also found to have a (1 00)-oriented texture. Moreover, the Au/PZT/LNO capacitor was found to significantly improve the fatigue and the effects of the LNO electrodes to the fatigue were discussed.
机译:研究了可以用作电极以改善铁电薄膜的疲劳和老化性能的氧化镧镍氧化物(LaNiO {sub} 3或LNO)导电薄膜。在本文中,将LNO薄膜直接旋涂到SiO {sub} 2 / Si(1 00)衬底上,然后在空气和氧气中进行热处理。发现获得了无裂纹的致密均匀的薄膜,具有良好的结晶度和中等晶粒,可以在较低的退火温度(550℃)和热退火温度的升高下优先形成(1 00)取向的LNO薄膜。 LNO薄膜具有更好的电性能,尤其是在750℃时。然而,LNO膜在850℃以上显示出结构转变。发现一种现象,即第一热处理温度和时间在确定LNO膜的微晶尺寸中起关键作用。溶胶-凝胶衍生的Pb(Zr {sub} 0.53Ti {sub} 0.47)O {sub} 3(PZT53 / 47)薄膜的后续沉积在LNO涂层SiO {sub} 2 / Si(1 00)上还发现基材具有(1 00)取向的纹理。此外,发现Au / PZT / LNO电容器可显着改善疲劳,并讨论了LNO电极对疲劳的影响。

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