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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >The effect of doping process on microstructure and dielectric properties of BaTiO3-based X7R materials
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The effect of doping process on microstructure and dielectric properties of BaTiO3-based X7R materials

机译:掺杂工艺对BaTiO3基X7R材料微观结构和介电性能的影响

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摘要

The effect of doping process on the dielectric properties, sintering behavior and microstructure were investigated on the BaTiO3-Nb2O5-Co3O4 ternary system ceramic. Temperature stable dielectric ceramics were obtained by different doping processes if only appropriate Nb5+ + Co3+ amount and Nb5+/Co3+ ratio were adopted. The dielectric constant was enhanced to the largest extent by nanometer oxide doping and the temperature characteristic satisfied the X7R specification. Two kinds of grains were observed in all the samples: matrix grains (BaTiO3) and the secondary phase grains (Ba6Ti17O40) formed by the incorporation of Nb5+ and Co3+ into BaTiO3 lattice and Ti4+ segregation. The matrix grains were about 1 mum in diameter and showed little grain growth with increasing temperature in all the doped samples, whereas the sizes of the secondary phase grains were strongly dependent on the doping process. The secondary phase formed liquid phase during firing, but the liquid phase contributed little to the densification of ceramics. (C) 2004 Kluwer Academic Publishers.
机译:研究了掺杂工艺对BaTiO3-Nb2O5-Co3O4三元系陶瓷介电性能,烧结行为和微观结构的影响。如果仅采用适当的Nb5 + + Co3 +量和Nb5 + / Co3 +比例,则可以通过不同的掺杂工艺获得温度稳定的介电陶瓷。通过纳米氧化物掺杂最大程度地提高了介电常数,并且温度特性满足X7R规格。在所有样品中均观察到两种晶粒:基体晶粒(BaTiO3)和通过将Nb5 +和Co3 +掺入BaTiO3晶格和Ti4 +偏析而形成的第二相晶粒(Ba6Ti17O40)。在所有掺杂样品中,基体晶粒的直径约为1微米,并且随着温度的升高几乎没有晶粒生长,而第二相晶粒的尺寸强烈依赖于掺杂过程。第二相在焙烧过程中形成液相,但是液相对陶瓷的致密化作用很小。 (C)2004 Kluwer学术出版社。

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