首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Microstructural, dielectric, impedance and electric modulus studies on vanadium-doped and pure strontium bismuth niobate (SrBi2Nb2O9) ceramics
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Microstructural, dielectric, impedance and electric modulus studies on vanadium-doped and pure strontium bismuth niobate (SrBi2Nb2O9) ceramics

机译:钒掺杂和纯铌酸锶铋(SrBi2Nb2O9)陶瓷的微结构,介电,阻抗和电模量研究

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SrBi2Nb2O9 (SBN) and SrBi2(Nb0.9V0.1)(2)O-9 (SBVN) ceramics were fabricated from the powders consisting of mu m sized grains, obtained via the solid state reaction route. V2O5 was found to be an effective microstructure modifier and grain growth truncator for SBN ceramics. X-ray structural studies carried out on SBVN ceramics confirmed the existence of preferential orientation (c-planes) of the grains. V2O5 addition has substantially improved the sinterability of SBN and enabled to achieve high density (95%) which was otherwise difficult in the case of pure SBN. The dielectric properties of SBN ceramics were significantly enhanced by the partial replacement of Nb ions by pentavalent vanadium ions. The complex impedance diagrams of dense SBVN ceramics exhibited only one semicircle indicating a significant contribution from the grains. In contrast, the impedance plots for the porous (density 88%) SBN ceramics show an additional low-frequency semicircle which was attributed to the blocker (pore) size effects. The dielectric behavior of SBN and SBVN ceramics was rationalized using the impedance and modulus data. (C) 2005 Springer Science + Business Media, Inc.
机译:SrBi2Nb2O9(SBN)和SrBi2(Nb0.9V0.1)(2)O-9(SBVN)陶瓷是由通过固态反应途径获得的,由微米级晶粒组成的粉末制成的。发现V2O5是SBN陶瓷的有效微结构改性剂和晶粒生长截断剂。在SBVN陶瓷上进行的X射线结构研究证实了晶粒优先取向(c面)的存在。 V 2 O 5的添加大大改善了SBN的可烧结性,并能够实现高密度(95%),而在纯SBN情况下很难做到这一点。通过用五价钒离子部分替代Nb离子,可以显着提高SBN陶瓷的介电性能。致密SBVN陶瓷的复阻抗图仅显示一个半圆,表明晶粒的重要贡献。相比之下,多孔(密度为88%)SBN陶瓷的阻抗图显示了一个附加的低频半圆,这归因于阻隔(孔)尺寸效应。使用阻抗和模量数据合理化了SBN和SBVN陶瓷的介电性能。 (C)2005年Springer Science + Business Media,Inc.

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