Studies on the thermoelectric effect in semiconducting MnO_(2) thin films

摘要

The thermoelectric power of MnO_(2) thin films prepared by pyrolytic technique has been measured from room temperature up to 423 K with reference to pure lead. The thickness and temperature dependence of its related parameters have been studied. The Fermi levels were determined using a non-degenerate semiconducting model. The carrier scattering index, activation energy and temperature coefficient of activation energy have all been obtained at different ranges of thickness and temperature. All the samples were optically transparent and polycrystalline in structure.