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DC conduction behaviour of niobium doped barium stannate

机译:铌掺杂锡酸钡的直流导电行为

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A few compositions with x <= 0.100 in the system BaSn1-xNbxO3 have been synthesized by solid-state ceramic method. All these are found to be single phase having cubic structure similar to BaSnO3. Electrical resistivity decreases with increasing niobium concentration up to x = 0.010 and thereafter it increases rapidly for the compositions with x = 0.050 and 0.100. This has been explained in terms of the change in charge compensation behaviour beyond x = 0.010. Measurement of Seebeck coefficient as a function of temperature shows that electrons are the majority charge carriers in compositions with x > 0.010 while compositions with x <= 0.010, exhibit p- type conductivity showing that holes are the majority charge carriers. (C) 2005 Springer Science + Business Media, Inc.
机译:通过固态陶瓷法合成了BaSn1-xNbxO3体系中x <= 0.100的一些成分。发现所有这些都是类似于BaSnO3的立方结构的单相。电阻率随着铌浓度的增加而降低,直至x = 0.010,此后对于x = 0.050和0.100的组合物,电阻率迅速增加。这已经通过电荷补偿行为的变化超过x = 0.010进行了解释。塞贝克系数作为温度的函数的测量表明,在x> 0.010的成分中,电子是大多数电荷载流子,而在x <= 0.010的成分中,电子表现出p型导电性,表明空穴是大多数电荷载流子。 (C)2005年Springer Science + Business Media,Inc.

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