Optical studies on Mg_xZn_(1-x)O wide band gap semiconductor in the perspective of phase equilibrium

摘要

Mg_xZn_(1-x)O (x = 0.0-0.20) ternary alloyed thin films have been deposited by sol-gel technique at 550 ℃. The studies on the change in c-axis lattice parameter, PL spectra, optical absorption coefficient, and band gap values suggest that the solubility limit of MgO in Mg_xZn_(1-x)O lies within the composition range 0.05 < x < 0.08. Optical studies on the annealed films confirm the formation of equilibrium solid solution up to x = 0.05 and the phase for the composition range 0.05 < x ≤ 0.20 to be in the non-equilibrium range.