Effect of ammoniating temperature on microstructure of one-dimensional GaN nanorods with Tb intermediate layer

摘要

GaN nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga_2O_3/Tb thin films. The influence of ammonating temperatures on microstructure, morphology and light emitting properties of GaN nanorods was ananlyzed in detail using X-ray diffraction, X-ray photo-electron spectroscopy, FT-IR spectrophotometer, scanning electron microscopy, high- resolution transmission electron microscopy, and photoluminescence spectroscopy. The results demonstrate that the GaN nanorods are single crystalline and exhibit hexagonal wurtzite symmetry. The highest crystalline quality was achieved at 950 ℃ for 15 min with the size of 100-150 nm in diameter, which have an excellent light emitting properties. A small red-shift occurs due to band-gap change caused by the tensile stress.