Characterization deep boron diffused p~(++) silicon layer

摘要

In recent years the boron impurity-based dissolved wafer process has been repeatedly demonstrated as a powerful tool for forming single crystal Si microstructures. However, there is very little report on detailed characterization of the deep boron diffused silicon layer. This paper presents the optimization of deep boron diffused p~(++) silicon layer (>10 μm thick) of boron concentration above 5 × 10~(19) atoms/cm~3. Detailed characterization of the p~(++) silicon layers, by using high resolution x-ray diffraction, secondary ion mass spectrometry, secondary electron micrograph are done. The optical behaviour of the p~(++) layers in mid-IR range is also carried out. The stress generated due to the deep diffusion is estimated to be 822 Mpa by Raman spectroscopy.