Growth and characterization of lead selenide thin films

摘要

Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH_3COO)_2 and SeO_2. X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.