Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power

摘要

In this study, transparent conductive Al doped zinc oxide (ZnO: Al, AZO) thin films with a thickness of 40 nm were prepared on the Corning glass substrate by radio frequency magnetron sputtering. The properties of the AZO thin films are investigated at different substrate temperatures (from 27 to 150 ℃) and sputtering power (from 150 to 250 W). The structural, optical and electrical properties of the AZO thin films were investigated. The optical transmittance of about 78 % (at 415 nm)-92.5 % (at 630 nm) in the visible range and the electrical resistivity of 7 × 10~(-4) Ω-cm (175.2 Ω/sq) were obtained at sputtering power of 250 W and substrate temperature of 70 ℃. The observed property of the AZO thin films is suitable for transparent conductive electrode applications.