Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering

摘要

In this work, hydrogenated amorphous silicon (a-Si:H) thin films were prepared by ion-beam-assisted sputtering, and the effect of hydrogen-ion energy on the structure of a-Si:H thin films were investigated using Raman spectroscopy, Fourier transform infrared spec-troscopy, and spectroscopic ellipsometry. It was observed that the network structure order and defect density of states of a-Si:H films were improved with the introduction of assisted-hydrogen-ion-beam, and that of a-Si:H thin films with moderate hydrogen-ion energy of 200 eV was optimal. The a-Si:H thin films with hydrogen-ion energy of 200 eV possessed the atomic hydrogen concentration, absorption coefficient at 0.8 eV and microstructure factor of 10.2 %, 0.7 cm~(-1) and 0.48, respectively. It was indicated that ion-beam-assisted sputtering was an alternative way to prepare device-quality a-Si:H thin films.