Study of (111)-oriented PZT thin films prepared by a modified sol-gel method

摘要

In this paper, Pb(Zr_(0.52)Ti_(0.48))O_3 thin films were successfully deposited on platinized silicon substrates and silicon substrates with PbTiO_3 seed layer by a modified sol-gel processing. The results show that the films were more likely to grow on platinum substrate, and the PbTiO_3 seed layer promoted the grain growth and influenced the crystal orientation of the films. With the annealing temperature and sintering time rising (from 600 ℃ for 1 h to 700 ℃ for 2 h) in the new method, the crystal orientation of PZT deposited on Pt substrate with PbTiO_3 seed layer changed from (100) to (111), and the grain size increased from dozens to hundreds of nanometer. Meanwhile, its ferroelectric and dielectric properties were greatly improved with 2P_r from 10.78 to 42.12 μC/cm~2 and ε_r from 348 to 978, respectively.