Simple strategy for production of aluminiumitrogen co doped zinc oxide nanowires

摘要

In this study, a novel ZnO homojunction was produced using hydrothermally grown n-type ZnO nanowires coated with p-type ZnO:Al:N [Zn (98 at.%), Al (1 at.%) and N (1 at.%)]. The fabricated homojunction was extensively characterized by scanning electron microscopy, energy dispersive spectroscopy, photoluminescence emission measurements and current voltage measurements. It was found that the p-type ZnO:Al:N affected the vertically aligned ZnO nanowires due to the incorporated dopant and very large capillary force during the drying process. PL emission measurements indicated that the p-type ZnO:Al:N coating suppressed the UV emission peak without degrading the visible emission peak. In terms of solar cell performances, the homojunctional device exhibits photovoltaic behavior with power conversion efficiency ～0.001576 %.