Optimization of structural, surface and electrical properties of solution processed LaNiO_3 conducting oxide

摘要

Growth, structural and electrical properties of perovskite type LaNiO_3 thin film nanostructures using chemical solution deposition at annealing temperatures ranging from 550 to 800 ℃ has been optimized. Poly-vinyl alcohol was used as stabilizing agent in the precursor solutions. X-ray diffraction and AFM, respectively confirmed phase purity and nanostructured growth with mono dispersed crystallite distribution at processing temperature of 700 ℃. Crystalline strain as low as 1 % was estimated from the XRD peaks; confirming relaxed and stable LNO crystalline structure deposited on quartz substrate. A systematic variation in the resistivity and carrier concentration with annealing temperatures were observed, revealing that 700 ℃ is an optimum temperature for a phase pure LNO films with smooth surface structures.