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Effects of MgO addition on the microstructure and dielectric properties of Ba_5LaZnNb_9O_(30) ceramics with high dielectric constant

机译:MgO对高介电常数Ba_5LaZnNb_9O_(30)陶瓷显微结构和介电性能的影响

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摘要

Polycrystalline Ba_5LaZnNb_9O_(30) doped with x wt% MgO (x = 1, 3, 5, 7, 10) were synthesized using a conventional solid-state reaction method. The phase structure, microstructure and dielectric properties of these ceramics were investigated. Results show that MgO addition plays an important role in achieving the low dielectric loss. Mg~(2+) ions can partially substitute for Zn~(2+) ions and the amount of substitution increases with x, while the excess MgO phase inhibits the grain growth of Ba_5LaZnNb_9O_(30) ceramics. X-ray diffraction reveals the second phase MgO appears when the doping content exceeds 1 wt%. For increasing values of x, dielectric constant (ε_r) decreases monotonously from 293.73 to 162.35, and the dielectric loss (tanδ) decreases greatly from 0.02173 to 0.00047 and then increases slightly to 0.00078 at 1 MHz, while the temperature coefficients of dielectric constant (τ_ε) reduces first and then changes a little. The sample of Ba_5LaZnNb_9O_(30) with 5 wt% MgO addition indicates high dielectric constant (ε_r = 186.14) and low dielectric loss (tanδ = 0.00047) at 1 MHz, however the τ_ε should be improved further.
机译:使用常规的固态反应方法合成了掺杂有x wt%MgO(x = 1、3、5、7、10)的多晶Ba_5LaZnNb_9O_(30)。研究了这些陶瓷的相结构,微观结构和介电性能。结果表明,添加MgO在实现低介电损耗方面起着重要作用。 Mg〜(2+)离子可以部分替代Zn〜(2+)离子,且取代量随x增加,而过量的MgO相抑制Ba_5LaZnNb_9O_(30)陶瓷的晶粒长大。 X射线衍射表明当掺杂含量超过1wt%时第二相MgO出现。随着x值的增加,介电常数(ε_r)从293.73单调降低至162.35,介电损耗(tanδ)从0.02173大幅降低至0.00047,然后在1 MHz时略微增加至0.00078,而介电常数的温度系数(τ_ε) )先减小,然后再变化一点。添加了5 wt%MgO的Ba_5LaZnNb_9O_(30)样品在1 MHz时显示出高介电常数(ε_r= 186.14)和低介电损耗(tanδ= 0.00047),但是τ_ε应该进一步改善。

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  • 来源
    《Journal of materials science》 |2015年第3期|1913-1917|共5页
  • 作者单位

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China, Key Lab of Functional Materials for Electronic Information (B), MOE, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China, Key Lab of Functional Materials for Electronic Information (B), MOE, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China, Key Lab of Functional Materials for Electronic Information (B), MOE, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China, Key Lab of Functional Materials for Electronic Information (B), MOE, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China, Key Lab of Functional Materials for Electronic Information (B), MOE, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-17 13:45:21

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