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Enhanced magnetic and ferroelectric properties in Cr doped Bi_2Fe_4O_9 ceramics

机译:Cr掺杂Bi_2Fe_4O_9陶瓷中增强的磁和铁电性能

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摘要

Single phase Bi_2Fe_(4(1-x))Cr_(4x)O_9 (0 ≤ x ≤ 0.08) ceramics are prepared by a modified Pechini method to investigate the effect of Cr doping on magnetic and ferroelectric properties. The results show that both the magnetic and ferroelectric properties are strongly dependent on Cr doping. With the introduction of Cr ions, Bi_2Fe_4O_9 ceramics change from antiferromagnetism to weak FM at room temperature, in accompaniment with the enhancement of ferroelectric properties. The remnant magnetization and polarization enhance monotonically from 0.014 emu/g and 0.103 μC/cm~2 for x = 0.02 sample to 0.025 emu/g and 0.53 μC/cm~2 for x= 0.08 sample, respectively. The improvement of magnetic and ferroelectric properties should be mainly related to the suppression of inhomogeneous magnetic spin structure and the reduction of electric leakage by Cr doping. These results suggest that Cr doping can adjust the magnetic and ferroelectric properties of Bi_2Fe_4O_9 ceramics, which is a promising candidate for room temperature multiferroics.
机译:通过改进的Pechini方法制备了单相Bi_2Fe_(4(1-x))Cr_(4x)O_9(0≤x≤0.08)陶瓷,以研究Cr掺杂对磁和铁电性能的影响。结果表明,磁性能和铁电性能都强烈依赖于Cr的掺杂。随着Cr离子的引入,Bi_2Fe_4O_9陶瓷在室温下由反铁磁性变为弱FM,伴随着铁电性能的增强。剩余的磁化强度和极化强度从x = 0.02样品的0.014 emu / g和0.103μC/ cm〜2单调提高到x = 0.08样品的0.025 emu / g和0.53μC/ cm〜2。磁和铁电性能的提高应主要与抑制不均匀的磁性自旋结构和减少铬掺杂引起的漏电有关。这些结果表明,Cr掺杂可以调节Bi_2Fe_4O_9陶瓷的磁性和铁电性能,这是室温多铁性材料的有希望的候选者。

著录项

  • 来源
    《Journal of materials science》 |2015年第3期|1732-1736|共5页
  • 作者单位

    Henan Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, People's Republic of China,School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

    Henan Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, People's Republic of China;

    Henan Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, People's Republic of China;

    Henan Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, People's Republic of China;

    Henan Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, People's Republic of China;

    School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

    School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

    School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-17 13:45:20

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