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Highly crystalline silicon carbide thin films grown at low substrate temperature by HWCVD technique

机译:通过HWCVD技术在低衬底温度下生长的高结晶碳化硅薄膜

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摘要

Highly crystalline cubic Silicon carbide (3C-SiC) thin films were deposited on quartz and silicon substrate at low substrate temperature of 400 ℃ by hot wire chemical vapour deposition technique using Silane, methane and hydrogen gases. The influence of methane flow rate (MFR) on structural and electrical properties of films has been investigated. All the deposited films are highly crystalline with crystallite size as high as 27 nm for film deposited with MFR = 6 SCCM. A decrease in crystallite size is observed with increase in MFR. Electrical conductivity of films deposited at low MFR (6-12 SCCM) is ~1 Ω~(-1) cm~(-1), however an order of decrease in conductivity has been observed as MFR increases beyond 12 SCCM. Activation energy of films also decreases mono-tonically with increasing MFR. The variation in dark conductivity and activation energy could be attributed to the microstructural changes in films with increasing MFR. No trace of any contamination of filament material is observed in these films. These highly crystalline and conductive films find applications in various microelectronic and optoelectronic devices.
机译:采用硅烷,甲烷和氢气的热线化学气相沉积技术,在400℃的低基板温度下,将高结晶立方碳化硅(3C-SiC)薄膜沉积在石英和硅基板上。研究了甲烷流速(MFR)对薄膜结构和电性能的影响。对于MFR = 6 SCCM的薄膜,所有的薄膜都是高度结晶的,微晶尺寸高达27 nm。随着MFR的增加,观察到微晶尺寸的减小。在低MFR(6-12 SCCM)下沉积的薄膜的电导率为〜1Ω〜(-1)cm〜(-1),但是当MFR超过12 SCCM时,发现电导率下降的顺序。膜的活化能也随着MFR的增加而单调降低。暗电导率和活化能的变化可归因于随着MFR增大的薄膜的微观结构变化。在这些膜中未观察到丝材料的任何污染的痕迹。这些高度结晶和导电的薄膜可用于各种微电子和光电设备。

著录项

  • 来源
    《Journal of materials science》 |2015年第3期|1381-1388|共8页
  • 作者单位

    Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039, India;

    Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-17 13:45:18

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