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首页> 外文期刊>Journal of materials science >Effects of TiO_2 on microstructures and properties of Li_2O-Al_2O_3-SiO_2 glass-ceramics for LTCC substrates
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Effects of TiO_2 on microstructures and properties of Li_2O-Al_2O_3-SiO_2 glass-ceramics for LTCC substrates

机译:TiO_2对LTCC衬底用Li_2O-Al_2O_3-SiO_2微晶玻璃结构和性能的影响。

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摘要

In order to increase the flexural strength and to adjust the coefficient of thermal expansion (CTE), TiO_2 was introduced into Li_2O-Al_2O_3-SiO_2 (LAS) glass-ceramics to satisfy LTCC applications. The effects of TiO_2 addition on the microstructure, thermal, mechanical and electrical properties were studied. The results showed that the crystal phases were composed of Li_2OAl_2O_37.5SiO_2 (major), as well as TiO_2 and CaMgSi_2O_6 (minor). The crystal phase TiO_2 having higher CTE value could appropriately increase the CTE value of LAS to fit the silicon and remarkably improve the flexural strength of LAS glass-ceramic with low CTE. The dielectric and insulating properties also strongly depended on the amount of TiO_2. LAS glass-ceramic sintered at 800 ℃ with high performances was achieved in the case of 1 wt% TiO_2: α = 2.56 × 10~(-6)/℃, σ = 151 MPa, ε = 6.8, tanδ = 1.731 × 10~(-3), ρ = 8.29 × 10~(10) Ω cm.
机译:为了提高抗弯强度和调节热膨胀系数(CTE),将TiO_2引入到Li_2O-Al_2O_3-SiO_2(LAS)玻璃陶瓷中以满足LTCC应用。研究了TiO_2的添加对其微观结构,热,机械和电性能的影响。结果表明,晶相由Li_2OAl_2O_37.5SiO_2(主要),TiO_2和CaMgSi_2O_6(次要)组成。具有较高CTE值的晶相TiO_2可适当提高LAS的CTE值以适合硅,并显着提高具有低CTE的LAS玻璃-陶瓷的弯曲强度。介电和绝缘性能也强烈取决于TiO_2的含量。 TiO_2含量为1 wt%时,可实现800℃LAS玻璃陶瓷的高性能烧结:α= 2.56×10〜(-6)/℃,σ= 151 MPa,ε= 6.8,tanδ= 1.731×10〜 (-3),ρ= 8.29×10〜(10)Ω厘米。

著录项

  • 来源
    《Journal of materials science》 |2016年第7期|7240-7245|共6页
  • 作者

    Bo Li; Dinan Duan; Quanyin Long;

  • 作者单位

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China,State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 610054, China,National Engineering Research Center of Electromagnetic Radiation Control Materials, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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