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Effect of Fe doping on thermochromic properties of VO_2 films

机译:铁掺杂对VO_2薄膜热致变色性能的影响

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摘要

Abstract Vanadium dioxide is a well-known phase transition material which has the potential to be applied in the smart windows. In this work, Fe-doped vanadium dioxide films were successfully prepared on glass substrates at 450 °C annealing temperature by direct current magnetron sputtering. These films were characterized by XRD, Raman shift, XPS and SEM tests. It can be found that Fe doping affects both the surface morphology and the thermochromic properties of the films. It is of great interest to note that the T~(C)drastically reduces which is attributed to the substitution of V_(4+)by Fe_(3+)in the VO~(2)crystal structure. Particularly, when Fe content increases to 9.8%, the lowest T~(C)is 33.5 °C (34.5 °C lower than bulk). Moreover, the luminous transmittance enhances and the solar modulation ability remains at 13.7%, greater than 10%, which is difficult to be achieved by adding other dopants. Such excellent thermochromic properties are good enough for practical application. These features indicate that Fe doping provides a new idea of applying VO~(2)to smart windows.
机译:摘要二氧化钒是一种众所周知的相变材料,具有在智能窗户中应用的潜力。在这项工作中,通过直流磁控溅射在450°C的退火温度下成功地在玻璃基板上制备了掺Fe的二氧化钒薄膜。这些膜通过XRD,拉曼位移,XPS和SEM测试表征。可以发现,Fe的掺杂会影响薄膜的表面形态和热致变色性能。值得注意的是,T〜(C)急剧减小,这是由于VO〜(2)晶体结构中的Fe_(3+)取代了V_(4+)。特别是当铁含量增加到9.8%时,最低的T〜(C)为33.5°C(比松散温度低34.5°C)。而且,透光率提高并且太阳调制能力保持在13.7%,大于10%,这是很难通过添加其他掺杂剂来实现的。这种出色的热致变色性能足以满足实际应用。这些特征表明,Fe掺杂提供了将VO〜(2)应用于智能窗户的新思路。

著录项

  • 来源
    《Journal of materials science》 |2018年第7期|5501-5508|共8页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:43:28

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