A facile hot plate annealing at low temperature of Pb(Zr_(0.52)Ti_(0.48))O_3 thin films by sol-gel method and their ferroelectric properties

摘要

Abstract Perovskite-structure Pb(Zr~(0.52)Ti~(0.48))O~(3)ferroelectric thin films were fabricated on fluorine doped tin oxide substrate by sol–gel method and then followed by a facile hot plate annealing at low temperature of 550 °C. With the increase of the annealing residence time from 2 to 40 min, phase transformation from pyrochlore to pure perovskite occurred. The obtained films exhibited excellent transmittance in the range of the visible light. With the annealing residence time became longer, the optical band-gap of the thin films became wider. Dielectric permittivity and remnant polarization value increased with the incremental annealing residence time to 40 min and then decreased for the sample annealded for 60 min. The highest dielectric permittivity and remnant polarization were observed for the thin films annealed at 550 °C for 40 min. The values of remnant polarization and coercive field for PZT film annealed for 40 min were 40.3 µC/cm_(2)and 228 kV/cm, respectively.