AbstractIn this work, pure and Ni-doped ZnO nanostructures (NSs) with different concentrations of Ni (2, 4, 6%) were succ'/> Structural, optical and electrical properties of Ni doped ZnO nanostructures synthesized by solution combustion method
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Structural, optical and electrical properties of Ni doped ZnO nanostructures synthesized by solution combustion method

机译:固溶燃烧法合成Ni掺杂ZnO纳米结构的结构,光电性能

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摘要

AbstractIn this work, pure and Ni-doped ZnO nanostructures (NSs) with different concentrations of Ni (2, 4, 6%) were successfully prepared via solution combustion method. The TEM photograph shows the formation of flake-like structures with the decrease in size of NSs as the dopant concentration is increased. XRD investigation shows the hexagonal wurtzite structure of doped and undoped ZnO nanostructures with a NiO peak (200) as secondary phase for 4 and 6% dopant concentration level. Broadening of spectra of ZnO around 480 cm−1in FTIR spectra is observed with the increase of dopant concentration. UV–Visible spectra show the increase in absorbance when the dopant level (Ni2+) is increase from 2 to 4% in ZnO and decrease in absorbance with further increase in dopant level to 6%. An increase in energy band gap is observed in Ni (6%)-doped ZnO due to due to the sp–d interactions taking place between the band electrons and the localised d electrons of Ni2+ions (Burstein-Moss effect). I–V characteristics reveal the increase in current with the increase in dopant level from 2 to 4% and decrease in current when the dopant level is further increased to 6% which is in agreement with the Burstein-Moss effect.
机译: 摘要 在这项工作中,纯净且掺杂Ni的ZnO纳米结构(NSs)具有不同的Ni(2 ,4、6%)通过固溶燃烧法成功制备。 TEM照片显示,随着掺杂剂浓度的增加,随着NSs尺寸的减小,形成了片状结构。 XRD研究表明,掺杂的和未掺杂的ZnO纳米结构的六角形纤锌矿结构,其中NiO峰(200)为第二相,掺杂浓度为4%和6%。随着掺杂剂浓度的增加,在FTIR光谱中观察到ZnO的光谱在480cm <上标−-1 附近变宽。紫外可见光谱显示,当ZnO中的掺杂物含量(Ni 2 + )从2%增加到4%时,吸光度增加;随着掺杂物含量的进一步增加,吸光度降低到6%。在Ni(6%)掺杂的ZnO中观察到能带隙增加,这是由于Ni 2 + 离子的带电子和局部d电子之间发生了sp–d相互作用( Burstein-Moss效应)。 I–V特性表明电流随掺杂物含量从2%增加到4%而增加,而当掺杂物含量进一步增加至6%时电流减小,这与Burstein-Moss效应相符。 < /摘要>

著录项

  • 来源
    《Journal of materials science》 |2018年第2期|1327-1332|共6页
  • 作者单位

    I.K. Gujral Punjab Technical University;

    I.K. Gujral Punjab Technical University;

    Quantum Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University;

    Quantum Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University;

    Quantum Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:43:24

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