Direct surface patterning of amorphous chalcogenide layers with high- energy H~+ and He~+ ion beams

摘要

As (Ge)-S (Se) based amorphous bulk chalcogenide glasses and layers have been used for surface geometrical relief recording by 2 MeV energy H+ and He+ ion-beams. The formation of giant (height modulation from nanometers up to micrometers) geometrical reliefs (dots, lines), have been investigated. Efficiency of surface patterning was compared for selected compositions, type of ion beam and conductivity of substrates. Comparisons with optical and e-beam recording were made with aim to establish the details of relief formation mechanisms. The results show applicability of high-energy ion beams for in situ fabrication of planar optical elements on the surface of chalcogenide glasses (bulk samples or amorphous films).