Investigation of interfacial phenomena in Ag-Si multilayers during the annealing process

摘要

Interfacial phenomena and microstructure in Ag-Si multilayers with a modulation period of 7.64 nm during annealing from 323 to 573 K were investigated by in situ x-ray diffraction and high-resolution transmission electron microscopy. Uphill and downhill diffusion were observed on annealing. The temperature dependence of the effective diffusion coefficient from 373 K (as to downhill diffusion regime) to 523 K was D_e = 2.02 x l0~-2o exp(-0.24 eV/k_bT) m~2/s. Diffusion of silicon atoms along silver grain boundaries was proposed as the main diffusion mechanism. After annealing, continuous silver sublayers changed to nanometer-sized silver particles (about 4.5 nm) coated completely by amorphous silicon.