Preparation of highly oriented Pb(Zr_0.52Ti_0.48)O_3 thin films by sol-gel-hydrothermal process

摘要

A novel sol-gel-hydrothermal process for preparation of highly oriented thin films of Pb(Zr_0.52Ti_0.48)O_3 is reported. Pb(Zr_0.52Ti_0.48)O_3 thin films with fully (11l) orientation were successfully prepared on platinized silicon substrates at low temperature (l00-200 deg. C) by combining a conventional sol-gel process and hydrothermal method, i.e., sol-gel-hydrothermal technique. The x-ray rocking curve for the (111) reflection as measured by a high-resolution four-crystal diffractrometer showed a narrow full width at half maximum value of 0.20 deg. for the as-prepared films. A dense, pinhole-free, and uniform surface morphology was observed from atomic force microscopy images of the films. The low leakage current density of the prepared films was also found.