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High-resolution electron microscopy investigations of stacking faults in Y_1Ba_2Cu_3O_7-δ metalorganic chemical vapor deposited thin films

机译:Y_1Ba_2Cu_3O_7-δ金属有机化学气相沉积薄膜中堆积缺陷的高分辨率电子显微镜研究

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摘要

New structural planar defects in Ba-deficient Y_1Ba_2Cu_3O_7-δ (YBCO) (l: 1.6:3) thin films grown on NdGaO_3 and SrTiO_3, substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO "l:2:3" stacking sequences along the c direction, which give rise to structural variants with locally "2:5:7" "3:4:7," or "4:6:10" cationic stoichiometries. The defects can be consistently interpreted as CuO-YO-CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.
机译:借助高分辨率电子显微镜观察到了通过金属有机化学气相沉积法在NdGaO_3和SrTiO_3衬底上生长的Ba不足的Y_1Ba_2Cu_3O_7-δ(YBCO)(l:1.6:3)薄膜中新的结构平面缺陷。缺陷与沿c方向的YBCO“ l:2:3”堆叠序列的扰动有关,这会导致局部带有“ 2:5:7”,“ 3:4:7”或“ 4: 6:10“阳离子化学计量。缺陷可以一致地解释为(a,b)平面中的CuO-YO-CuO / CuO转换或YO / BaO(BaO / YO)互转换,并沿c轴延伸了几纳米。针对两种特殊情况,提出了基于图像匹配和仿真的结构模型。人们认为这些结构缺陷可能是助焊剂钉扎的有效部位。

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