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首页> 外文期刊>Journal of Low Temperature Physics >Anomalous metallic state in (TTM-TTP)I3 with a highly one-dimensional half-filled band under pressure beyond 7 GPa
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Anomalous metallic state in (TTM-TTP)I3 with a highly one-dimensional half-filled band under pressure beyond 7 GPa

机译:(TTM-TTP)I3 中的异常金属态,在超过7 GPa的压力下具有高度一维的半填充带

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摘要

We demonstrate that the title compound (TTM-TTP)I3 with a highly one-dimensional half-filled band, which shows a metal-insulator (MI) transition around TMI=120 K, is metallized by application of extremely high pressure (P>7 GPa) using the cubic anvil apparatus. Above 5.7 GPa, the metallic behavior is described by { $rho sim T^alpha $ } with α ∼ 0.3 which is much smaller than the expected value of Fermi liquid theory, α=2. Based on these findings, the driving force of the MI transition is discussed.
机译:我们证明标题化合物(TTM-TTP)I3 具有高一维半填充带,显示出围绕TMI = 120 K的金属-绝缘体(MI)跃迁,通过立方砧装置施加极高的压力(P> 7 GPa)。高于5.7 GPa时,金属行为由{$ rho sim T ^ alpha $}描述,其α〜0.3远小于费米液体理论的期望值α= 2。基于这些发现,讨论了MI转变的驱动力。

著录项

  • 来源
    《Journal of Low Temperature Physics 》 |2006年第4期| 197-200| 共4页
  • 作者单位

    Department of Material Science Graduate School of Science Osaka City University;

    Department of Material Science Graduate School of Science Osaka City University;

    Department of Material Science Graduate School of Science Osaka City University;

    Department of Material Science Graduate School of Science Osaka City University;

    Department of Organic and Polymeric Materials Tokyo Institute of Technology;

    Department of Organic and Polymeric Materials Tokyo Institute of Technology;

    Insistute for Solid State Physics (ISSP) The University of Tokyo;

    Insistute for Solid State Physics (ISSP) The University of Tokyo;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    71.10.Pm; 71.30.+h;

    机译:71.10.Pm;71.30。+ h;

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